Construction: It consists of a gallium arsenide infrared emitting diode optically coupled to a silicon phototransistor.High Isolation Voltage: The TLP421 offers high isolation voltage (5000 Vrms minimum), making it ideal for separating circuits with different voltage levels and preventing electrical noise from transferring between them.High Current Transfer Ratio (CTR): It features a minimum CTR of 50%, with a typical range up to 600%.High Collector-Emitter Voltage: The minimum collector-emitter voltage (VCEO) is 80V, allowing for higher output voltage applications.Standard DIP-4 Package: This package is suitable for through-hole mounting on printed circuit boards.Safety Agency Approvals: It is recognized by UL (UL1577) and approved by BSI (BS EN60065, BS EN60950), SEMKO (EN60065, EN60950, EN60335).Wide Operating Temperature Range: It functions reliably across a wide temperature range, typically from -55°C to 100°C.
