STGF20H60DF GF20H60DF TO-220F Trans IGBT Chip N-CH 600V 40A 37000mW

• Collector-Emitter Voltage (V_CES): 600 V
• Continuous Collector Current (I_C): 40 A at T_C = 25°C
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.6 V (typical) at I_C = 20 A
• Gate-Emitter Voltage (V_GE): ±20 V
• Total Power Dissipation (P_tot): 37 W
• Operating Junction Temperature (T_J): -55°C to 175°C
• Package: TO-220FP

Features:

• High-speed switching
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode

Applications:

• Motor control
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits