model: STD25NF10LT4
Risk Level: 1.11
Other features: LOGIC LEVEL COMPATIBLE
Avalanche Energy
Efficiency Class (Eas): 450 mJ
Shell connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
Minimum drain-source
breakdown voltage: 100 V
Maximum Drain Current
(Abs) (ID): 25 A
Maximum drain current
(ID): 25 A
Maximum drain-source
on-resistance: 0.04 ?
FET Technology: METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity
Level: 1
Number of components: 1
Number of terminals: 2
Working Mode: ENHANCEMENT MODE
Maximum Operating
Temperature: 175 °C
Peak Reflow
Temperature (Celsius): 260
Polarity/Channel
Type: N-CHANNEL
Maximum power
dissipation (Abs): 100 W
Maximum pulse drain
current (IDM): 100 A
Subcategories: FET General Purpose Power
Surface Mount: YES
Terminal surface: Matte Tin (Sn)
Terminal type: GULL WING
Terminal Location: SINGLE
Maximum time at peak
reflow temperature: 30
Transistor
Applications: SWITCHING
