Description: MOSFET P-CH 30V 8A 8SOIC
Detailed description: Surface mount P-channel 30V 8A (Ta) 3.1W (Ta) 8-SOIC
FET type: P-channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss): 30V
Current - Continuous Drain (Id) at 25°C: 8A (Ta)
Drive voltage (maximum Rds On, minimum Rds On): 4.5V, 10V
Rds On (max) at different Id, Vgs: 32 milliohms @ 8A, 10V
Vgs(th) (maximum value) at different Id: 2.4V @ 250µA
Gate charge (Qg) at different Vgs (max): 16nC @ 10V
Vgs (maximum value): ±20V
Input capacitance (Ciss) at different Vds (max): 760pF @ 15V
FET functions:-
Power dissipation (max): 3.1W (Ta)
Working temperature: -55°C ~ 150°C (TJ)
Installation type: surface mount
Package/Casing: 8-SOIC (0.154", 3.90mm wide)
Other names: 785-1284-2
Compliance with lead-free requirements/ Compliance with RoHS regulations: Lead-free/ Compliance with RoHS regulations
Moisture Sensitivity Level (MSL): 1 (Unlimited)
