model: | 2N6520 |
Risk level: | 5.06 |
Maximum collector current (IC): | 0.5 A |
Collector-based maximum capacity: | 6 pF |
Collector-emitter maximum voltage: | 350 V |
Configuration: | SINGLE |
Minimum DC current gain (hFE): | 15 |
Number of components: | 1 |
Number of terminals: | 3 |
Maximum operating temperature: | 150 °C |
Maximum power consumption environment: | 1.5 W |
Maximum power dissipation (Abs): | 0.625 W |
Certification status: | Not Qualified |
Subcategory: | Other Transistors |
Surface mount: | NO |
Terminal surface layer: | Tin/Lead (Sn/Pb) |
Terminal form: | THROUGH-HOLE |
Terminal location: | BOTTOM |
Transistor Applications: | AMPLIFIER |
Transistor component materials: | SILICON |
Nominal transition frequency (fT): | 40 MHz |
Maximum off time (toff): | 3500 ns |
Maximum opening time (tons): | 200 ns |
VCEsat-Max? | 1 V |
